Analysis of Erbium and Vanadium Diffusion in Porous Silicon Carbide

Table 2

Fitting parameters for Figure 4.

Dopant	𝜉𝑉	𝜉𝑆	𝜉𝑉	𝜉𝑆
Vanadium (in non-porous SiC)	0.32	0.23	0.21	0.33
Vanadium (in porous SiC)	0.29	0.24	0.23	0.21
Erbium (in non-porous SiC)	0.31	0.24	0.10	0.27
Erbium (in porous SiC)	0.33	0.30	0.22	0.19