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Advances in Condensed Matter Physics
Volume 2012 (2012), Article ID 682125, 8 pages
http://dx.doi.org/10.1155/2012/682125
Research Article

ZnO:Al Grown by Sputtering from Two Different Target Sources: A Comparison Study

Applied Physics Department, College of Sciences, University of Sharjah, P.O. Box 27272, Sharjah, United Arab Emirates

Received 1 June 2011; Accepted 5 January 2012

Academic Editor: Jörg Fink

Copyright © 2012 Abdalla A. Alnajjar. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Al-doped ZnO thin films were deposited from two different targets. Ceramic targets were used in RF magnetron sputtering, whereas pulsed magnetron sputtering was used to grow films from powder targets. ZnO:Al films with different thicknesses were sputtered directly on soda-lime glass substrates. The film thickness was in the 0.04–2.0 μm range. The microstructure, such as the grain size and the texture, of the two differently grown ZnO:Al transparent conductive oxide films of different thickness, was studied using X-ray diffraction θ/2θ scans. The optical properties, such as the transmittance and reflectance, were measured using a UV-Vis-NIR spectrometer. Further, the sheet resistance, resistivity, carrier concentration, and Hall mobility of these ZnO:Al thin films were measured as a function of film thickness. These results obtained from the two different deposition techniques were compared and contrasted.