Review Article

Multiferroic Memories

Figure 8

Resistance plotted as a function of magnetic field in magnetic tunnel junctions having Co and LSMO ferromagnetic electrodes and multiferroic BFO layer. The measurements were performed at 3 K and 10 mV: (a) BFO (5 nm) single barrier, that is, without STO, (b) BFO (2 nm)/STO (1.6 nm) double barrier, that is, with STO, and (c) Evolution of the TMR with temperature for these two junctions. Figures were reproduced with permission from Béa et al. [54].
926290.fig.008a
(a)
926290.fig.008b
(b)
926290.fig.008c
(c)