Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate
Figure 3
Temperature-dependent PR spectra for (a) Ge bulk and (b) Ge/Si0.16Ge0.84 MQW structure at several temperatures between 10 and 300 K. The dashed curves are the experimental curves and the solid curves are the least-squares fit to the first-derivative Lorentzian line shape.
