Electrical Properties of Amorphous Titanium Oxide Thin Films for Bolometric Application

<table>Temperature dependence of resistivity <svg height="12.175" id="M40" style="vertical-align:-3.56265pt" version="1.1" viewbox="0 0 9.2875004 12.175" width="9.2875004" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> in the temperature range from 20°C to 100°C.</table>

Advances in Condensed Matter Physics

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Figure 4

Figure 4: Electrical Properties of Amorphous Titanium Oxide Thin Films for Bolometric Application 