Characterization of WO<sub>3</sub> Thin Films Grown on Silicon by HFMOD

<table>W(4f) core level spectra of WO<sub>3</sub> films: (a) as-deposited and (b) annealed at 500°C.</table>

Advances in Condensed Matter Physics

Figure 1: Characterization of WO<sub>3</sub> Thin Films Grown on Silicon by HFMOD 