Structural and Electrical Characteristics of Metal-Ferroelectric Pb<sub><b>1.1</b></sub>(Zr<sub><b>0.40</b></sub>Ti<sub><b>0.60</b></sub>)O<sub><b>3</b></sub>-Insulator (ZnO)-Silicon Capacitors for Nonvolatile Applications

<table> (a) C-V and (b) J-V characteristics of Au/ZnO/Si (100) (MIS) diodes annealed at 700°C for 30 min.</table>

Advances in Condensed Matter Physics

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Figure 4

Figure 4: Structural and Electrical Characteristics of Metal-Ferroelectric Pb<sub><b>1.1</b></sub>(Zr<sub><b>0.40</b></sub>Ti<sub><b>0.60</b></sub>)O<sub><b>3</b></sub>-Insulator (ZnO)-Silicon Capacitors for Nonvolatile Applications 

Figure 4 | Structural and Electrical Characteristics of Metal-Ferroelectric Pb1.1(Zr0.40Ti0.60)O3-Insulator (ZnO)-Silicon Capacitors for Nonvolatile Applications 