Structural and Electrical Characteristics of Metal-Ferroelectric Pb<sub><b>1.1</b></sub>(Zr<sub><b>0.40</b></sub>Ti<sub><b>0.60</b></sub>)O<sub><b>3</b></sub>-Insulator (ZnO)-Silicon Capacitors for Nonvolatile Applications

<table> (a) C-V curves and (b) the memory window of the Au/PZT/ZnO/Si (MFIS) structure.</table>

Advances in Condensed Matter Physics

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Figure 5

Figure 5: Structural and Electrical Characteristics of Metal-Ferroelectric Pb<sub><b>1.1</b></sub>(Zr<sub><b>0.40</b></sub>Ti<sub><b>0.60</b></sub>)O<sub><b>3</b></sub>-Insulator (ZnO)-Silicon Capacitors for Nonvolatile Applications 

Figure 5 | Structural and Electrical Characteristics of Metal-Ferroelectric Pb1.1(Zr0.40Ti0.60)O3-Insulator (ZnO)-Silicon Capacitors for Nonvolatile Applications 