Low-Resistivity p-Type Doping in Wurtzite ZnS Using Codoping Method

Table 1

Ionization energy 𝜀(0/−) and formation energy Δ𝐻_𝑓 of defect complexes in ZnS.

	2NS–AlZn	2NS–GaZn	2NS–InZn	NS
𝜀(0/−) (meV)	40.1	37.5	44.1	103.9
Δ𝐻𝑓 (eV)	3.04	3.17	3.16	3.35