|
Parameter | Sample type |
I-type | II-type | III-type |
|
Technological regime | = 220 °C = 60 min | = 260 °C = 75 min | = 260 °C = 80 min |
Equilibrium density of carriers (CdS base) | << 1013 cm−3 | ≥ 1.5 × 1013 cm−3 | ≥ 1.5 × 1013 cm−3 |
Cu2S-CdS heterostructure (pulsed capacitance-BELIV) | Capacitor-like [18], insulator-specific state of CdS base material | Junction-like [18], generation current component in CdS base is pronounced | Junction-like [18], barrier charging current prevails |
Activation energy of the dominant traps (DLTS, PIS) | n/a [19] 1.17 ± 0.02 eV; 1.65 ± 0.02 eV; 2.19 ± 0.04 eV | [19] 0.22 ± 0.02 eV; 0.40 ± 0.02 eV; [19] 1.21 ± 0.02 eV; 1.56 ± 0.02 eV; 2.19 ± 0.04 eV | [19] 0.22 ± 0.02 eV; 0.31 ± 0.02 eV; [19] 1.19 ± 0.02 eV; 1.62 ± 0.02 eV; 2.19 ± 0.04 eV |
Grain size/homogeneity of distribution crystal grains in CdS substrate (MCI) | <1 μm inhomogeneous | 2–10 μm homogeneous | 2–10 μm inhomogeneous |
Instantaneous lifetime of the initial decay (MW-PC) | 3 ns | 5 ns | 10 ns |
Instantaneous lifetime of the asymptotic decay (MW-PC) | >100 μs | >800 μs | >400 μs |
Ratio of the amplitudes of the asymptotic to the initial MW-PC decay = / | 0.25 | 0.01 | 0.04 |
Instantaneous lifetime of the initial PL decay G-PL peaked at 500 nm (TR-PL) | 5 ns PL photo-quenching observable | 2 ns the strongest PL photo-quenching | 2 ns strong PL photo-quenching |
Instantaneous lifetime of the asymptotic decay for R-PL peaked at 700 nm (TR-PL) | n/a | 40 ns | 150 ns |
Ratio of the G-PL & R-PL intensities / (MCI-PLS) | <1 | ≥1 | ≥1.5 |
Fractional SER index α (MW-PC) | 0.20 | 0.16 | 0.17 |
Fractal factor (SER) | 0.17 | 0.13 | 0.14 |
|