A Circuit Model for CMOS Hall Cells Performance Evaluation including Temperature Effects

<table>The simulated absolute sensitivity <svg height="15.5375" id="M100" style="vertical-align:-3.276pt" version="1.1" viewbox="0 0 17.625 15.5375" width="17.625" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.4)"><path d="M457 488l-30 -3q-17 148 -131 148q-53 0 -84.5 -34.5t-31.5 -82.5q0 -42 25.5 -72t74.5 -62l33 -22q63 -42 95 -85t32 -102q0 -84 -67 -137t-163 -53q-58 0 -113 22t-70 43l-4 152l27 4q4 -32 15 -62.5t31 -59.5t53.5 -47t76.5 -18q56 0 92 35t36 96q0 39 -25 70t-78 68
l-31 22q-32 23 -53.5 41.5t-45 57t-23.5 77.5q0 82 58 132.5t156 50.5q46 0 101 -17l18.5 -6t17 -6t8.5 -3q-4 -55 0 -147z" id="x1D446"></path></g>
<g transform="matrix(.012,-0,0,-.012,8.225,15.475)"><path d="M716 28l-8 -28h-254l8 28q55 5 66 17.5t5 47.5l-30 145h-232l-74 -138q-21 -43 -11 -54.5t72 -17.5l-6 -28h-235l8 28q53 7 73.5 21t53.5 70l319 540l33 8q6 -43 33 -176l80 -381q10 -49 26.5 -63t72.5 -19zM495 281l-49 264h-2l-149 -264h200z" id="x1D434"></path></g>
</svg> versus the biasing current for two integration CMOS processes.</table>

Advances in Condensed Matter Physics

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Figure 9

Figure 9: A Circuit Model for CMOS Hall Cells Performance Evaluation including Temperature Effects 