Research Article
A Circuit Model for CMOS Hall Cells Performance Evaluation including Temperature Effects
Table 1
Specific parameters evaluation for some of the integrated Hall cells.
| Integrated geometry | XL | Optimum | Borderless |
| Shape | | | | Measured (kΩ) @ K, T | 2.2 | 1.8 | 1.3 | Measured (V/AT) @ = 1 mA | 80.6 | 62.4 | 31.1 | Measured offset drift (T/°C) |
0.039
| 0.328 | 0.526 | L,W (μm) of the n-well | | | | | | | Contacts length (μm) | 18.3 | 4.7 | 2.3 |
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