Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

Figure 10

Schematic of band alignment at the interfaces of silicon with oxides of several transition and rare-earth metals as compared to the Si/SiO₂ interface. The diagrams are shown for amorphous (a-) and crystalline (c-) phases. The origin of the energy scale is located at the top of the silicon VB.