Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

<table>Square root of the PC yield as a function of photon energy in Si/SiO<sub>2</sub>/ Gd<sub><i>x</i></sub>Al<sub>2−<i>x</i></sub>O<sub>3</sub>/Au capacitors with different concentration of gadolinium in the insulating layer.</table>

Advances in Condensed Matter Physics

fig11

Figure 11

Figure 11: Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study 