Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study
Figure 14
Cube root of the IPE yield as a function of photon energy as inferred from the data shown in Figure 13. The inferred spectral threshold of electron IPE from the VB of Si into the CB of LuxAl1−xO3 is indicated by vertical line. The arrows and indicate onsets of direct optical transition in the silicon crystal.
