Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

<table>Energies of the VB top and CB bottom in different oxide insulators as a function of metal cation radius referenced to the band edges of the Si crystal as inferred from the IPE experiments.</table>

Advances in Condensed Matter Physics

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Figure 15

Figure 15: Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study 