Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study
Figure 17
Semilogarithmic plots comparing electron and hole IPE spectra from Si and Ge into a 10 nm thick La2Hf2O7 insulator. The inset schematically shows the interface band diagram and illustrates the physical meaning of the observed spectral thresholds.
