Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study
Figure 18
Energies of the VB top and CB bottom in different oxides as a function of cation radius referenced to the band edges for Ge crystal as inferred from the IPE experiments. The top of the Ge VB is at eV above the silicon VB as measured relative to the common a-Al2O3 CB bottom reference level.
