Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study
Figure 19
(a) Electron IPE quantum yield as a function of photon energy measured on (100)Si0.72Ge0.28/SiO2(83 nm)/Al samples under indicated positive bias on the Al gate electrode. (b) Determination of the electron IPE threshold () using plots. Lines guide the eye. The inset shows a magnified view of the photocurrent yield in the subthreshold spectral region.
