Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study
Figure 2
Schematic semiconductor/insulator energy band diagram for positive (a) and negative (b) bias applied to the top metal electrode (not shown), indicating the electron transitions in the case of electron IPE (threshold ) and hole IPE (threshold ) from the semiconductor into the insulator and the insulator PC (threshold ). Thanks to the externally applied electric field, the thresholds and correspond to the energy position of the insulator band edges at the interface, not influenced by the charges distributed over the remaining thickness of the insulating layer. refers to the width of semiconductor bandgap.
