Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

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</svg> layers and the bottom of the SiO<sub>2</sub> CB as a function of Ge content in the semiconductor.</table>

Advances in Condensed Matter Physics

fig21

Figure 21

Figure 21: Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study 