Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study
Figure 22
Semilogarithmic plot of the IPE quantum yield as a function of photon energy as measured on (100)Si/Ge/Sn0.05Ge0.95(9 nm)/Al2O3(9 nm)/Au sample with the applied bias varying from 0.5 V to 2.0 V.
