Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

<table>Semilogarithmic plot of the IPE quantum yield as a function of photon energy as measured on (100)Si/Ge/a-Al<sub>2</sub>O<sub>3</sub>(9 nm)/Au and (100)Si/Ge/Sn<sub>0.05</sub>Ge<sub>0.95</sub>/a-Al<sub>2</sub>O<sub>3</sub>(9 nm)/Au samples prepared by using different alumina growth schemes.</table>

Advances in Condensed Matter Physics

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Figure 23

Figure 23: Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study 