Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study
Figure 24
The plots in samples with a-Al2O3 (a) and HfO2 (b) insulators measured under different positive voltages applied to the top Au electrode used to determine the electron IPE spectral thresholds. The inset in panel (a) shows the Schottky plot of the thresholds of electron IPE from the GaAs VB into the CB of Al2O3 (○, □) and HfO2 (△) and into the IL (▽). Vertical arrows mark the observed threshold energies and lines guide the eye.
