Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

Figure 25

Energies of the VB top and CB bottom in different oxides as a function of cation radius referenced to the band edges for GaAs crystal as inferred from the IPE experiments. The top of the GaAs VB is at 𝛿𝐸_𝑉=0.2 eV below the silicon VB as measured relative to the common a-Al₂O₃ CB bottom reference level.