Review Article

Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

Figure 27

Semilogarithmic plot of the IPE quantum yield as a function of photon energy as measured on (100)InAs/a-Al2O3/Au samples prepared by using different alumina growth schemes. The vertical arrow marks the energy of direct optical transitions in the InAs crystal.
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