Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study
Figure 28
Cube root of the IPE yield as a function of photon energy as measured at different bias applied to the (100)InAs/a-Al2O3 (20 nm)/Au capacitor which are used to determine the spectral thresholds. The inferred thresholds (low/high) of electron IPE from the VB of InAs into the CB of a-Al2O3 are indicated by vertical lines. Lines guide the eye.
