Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study
Figure 29
Schottky plots of the electron IPE spectral thresholds observed in samples with Al2O3 insulator and different content of In in the semiconductor substrate. The “high” spectral threshold corresponds to the energy barrier between the top of the VB and the bottom of the deposited oxide CB. The “low” barriers stem from the electron IPE mediated by the narrow-gap “native” oxide present at the interface. Lines guide the eye.
