Review Article

Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

Figure 3

Semilogarithmic plots of the photocurrent yield as measured on p-Si(100)/Al2O3/Au (□) and n+-Si(100)/Al2O3/Au (○) capacitors biased to an average strength of electric field in the oxide of 2 MV/cm. The insulating layer was fabricated by ALD of alumina at 300°C. For comparison, also shown is the yield spectrum measured on a n+-Si(100)/SiO2/Au sample for the oxide field strength of 1.57 MV/cm (△). The inset schematically illustrates the observed electron IPE from the CB and VB of silicon.
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