Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

<table>Semilogarithmic plot of the IPE quantum yield as a function of photon energy as measured on p-type (100)InP/a-Al<sub>2</sub>O<sub>3</sub>(8 nm)/Au samples prepared by using different InP surface treatments prior to the alumina growth by ALD. The vertical arrows <svg height="15.4" id="M209" style="vertical-align:-3.39066pt" version="1.1" viewbox="0 0 17.200001 15.4" width="17.200001" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> and <svg height="15.25" id="M210" style="vertical-align:-3.276pt" version="1.1" viewbox="0 0 17.200001 15.25" width="17.200001" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path d="M609 650l-19 -162l-30 -2q2 69 -14 94q-9 18 -28.5 26t-74.5 8h-88q-30 0 -37 -6.5t-12 -36.5l-41 -212h103q48 0 69 5.5t32 19t26 50.5h29l-40 -198h-30q2 58 -11.5 70.5t-85.5 12.5h-99l-30 -167q-17 -87 3 -101q18 -15 111 -15q59 0 89 7t54 27q8 7 15.5 16t16 21.5
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<g transform="matrix(.012,-0,0,-.012,10.8,15.187)"><path d="M412 140l28 -9q0 -2 -35 -131h-373v23q112 112 161 170q59 70 92 127t33 115q0 63 -31 98t-86 35q-75 0 -137 -93l-22 20l57 81q55 59 135 59q69 0 118.5 -46.5t49.5 -122.5q0 -62 -29.5 -114t-102.5 -130l-141 -149h186q42 0 58.5 10.5t38.5 56.5z" id="x32"></path></g>
</svg> mark the energy of direct optical transitions in the InP crystal.</table>

Advances in Condensed Matter Physics

fig30

Figure 30

Figure 30: Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study 