Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

<table>Semilogarithmic plot of the IPE quantum yield as a function of photon energy as measured on (100)GaP/a-Al<sub>2</sub>O<sub>3</sub>(20 nm)/Al sample with the applied bias varying from 0.55 V to 3.5 V. The inset illustrates determination of electron IPE spectral threshold <svg height="15.5375" id="M219" style="vertical-align:-3.39066pt" version="1.1" viewbox="0 0 18.487499 15.5375" width="18.487499" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> plots. Lines guide the eye.</table>

Advances in Condensed Matter Physics

fig31

Figure 31

Figure 31: Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study 