Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study
Figure 32
Semilogarithmic plot of the IPE quantum yield as a function of photon energy as measured on (100)InSb/a-Al2O3(8 nm)/Au sample with the applied bias varying from 1 V to 3.75 V. The vertical arrows and mark the energy of direct optical transitions in the InSb crystal.
