Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study
Figure 33
Semilogarithmic plot of the IPE quantum yield as a function of photon energy as measured on (100)GaSb/a-Al2O3(10 nm)/Au sample with the applied bias varying from 0.6 V to 2.0 V. The vertical arrows , , and mark the energy of direct optical transitions in the GaSb crystal.
