Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study
Figure 34
Comparison of the yield spectra for (100) faces of GaSb, GaAs, GaP, (, 0.53) InSb, and InP in contact with a 10–20 nm thick a-Al2O3 insulating film measured under approximately equal strength of electric field in the oxide (positive bias applied to the opposite metal electrode). The inferred variations in the semiconductor VB top energies () measured relative to the common reference level of Al2O3 CB edge are indicated by arrows.
