Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study
Figure 35
Semiogarithmic spectral plots of the electron IPE yield as measured in (100)Ge/Si/HfO2/Au samples under +1.5 V bias on the Au electrode for different thicknesses (in monolayers of Si) of the inserted Si IL. The vertical lines mark the energy onsets of direct optical transitions between high symmetry points in the Brillouin zone of the Ge substrate crystal. The inset illustrates determination of the electron IPE threshold (Ge/HfO2) marked by the vertical line using plots. Lines guide the eye.
