Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study
Figure 5
Linear plots of the photocurrent quantum yield in a n+-Si(100)/Al2O3(20 nm)/Au capacitor measured under different positive voltages V applied to the metal electrode. Arrow indicates the observed field-induced spectral threshold shift. The inset schematically illustrates the observed electron IPE from the CB and VB of silicon corresponding to the spectral thresholds and , respectively.
