Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study
Figure 6
Schottky plot of the field-dependent electron IPE thresholds as measured on samples with different types of insulating Al2O3 grown on silicon crystal substrate. Lines illustrate linear extrapolation used to infer the zero-field energy barrier between the top of the Si VB and the bottom of the Al2O3 CB.
