Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

<table>Schematic of band alignment at the interfaces of silicon with oxides of several light metals. The diagrams are shown for amorphous (a-) and crystalline cubic (<i>γ</i>-, c-) phases. The origin of the energy scale is at the top of the silicon VB.</table>

Advances in Condensed Matter Physics

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Figure 7

Figure 7: Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study 