Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

Table 1

Bandgap width of several semiconductors (𝐸_𝑔), the electron photoemission barrier (Φ_𝑒), and the corresponding CB and VB offsets Δ𝐸_𝐶 and Δ𝐸_𝑉 at the interfaces with a-Al₂O₃ (𝐸_𝑔=6.1 eV). All energies are in eV (±0.1 eV).

sc	𝐸𝑔 (300 K)	Φ𝑒	Δ𝐸𝐶	Δ𝐸𝑉
Si	1.12	3.25	2.1	2.9
Ge	0.67	2.85	2.2	3.3
GaAs	1.42	3.45	2.0	2.7
In0.53Ga0.47As	0.74	3.45	2.7	2.7
InAs	0.35	3.45	3.1	2.7
GaP	2.24	4.1	1.8	2.0
InP	1.35	4.05	2.7	2.05
GaSb	0.73	3.05	2.3	3.05
InSb	0.17	3.05	2.9	3.05