Modeling Surface Recombination at the p-Type <svg style="vertical-align:-4.32pt;width:67.25px;" id="M1" height="21.262501" version="1.1" viewBox="0 0 67.25 21.262501" width="67.25" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg"><g transform="matrix(.022,-0,0,-.022,.062,15.825)"><path id="x53" d="M409 504l-29 -5q-16 60 -44.5 96t-86.5 36q-54 0 -82.5 -32t-28.5 -77q0 -51 30.5 -82.5t96.5 -65.5l35.5 -18t33 -19.5t33.5 -23.5l27 -25.5t24.5 -32t13.5 -36.5t6 -45q0 -80 -62 -134.5t-160 -54.5q-47 0 -98 15q-22 7 -50 21q-8 23 -27 155l30 7q7 -27 18 -52
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<table>Band diagram at a p-type back surface showing band bending, surface potential, and surface field (space charge) layer.</table>

Advances in Condensed Matter Physics

fig1

Figure 1

Figure 1: Modeling Surface Recombination at the p-Type <svg style="vertical-align:-4.32pt;width:67.25px;" id="M1" height="21.262501" version="1.1" viewBox="0 0 67.25 21.262501" width="67.25" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg"><g transform="matrix(.022,-0,0,-.022,.062,15.825)"><path id="x53" d="M409 504l-29 -5q-16 60 -44.5 96t-86.5 36q-54 0 -82.5 -32t-28.5 -77q0 -51 30.5 -82.5t96.5 -65.5l35.5 -18t33 -19.5t33.5 -23.5l27 -25.5t24.5 -32t13.5 -36.5t6 -45q0 -80 -62 -134.5t-160 -54.5q-47 0 -98 15q-22 7 -50 21q-8 23 -27 155l30 7q7 -27 18 -52
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Advances in Condensed Matter Physics

Modeling Surface Recombination at the p-Type Interface via Dangling Bond Amphoteric Centers

Figure 1