Modeling Surface Recombination at the p-Type Si/SiO₂ Interface via Dangling Bond Amphoteric Centers

Figure 3

Effective surface recombination velocity as a function of excess electron concentration for both SRH and amphoteric center recombination for 𝐸_corr=0: (a) at flat band (𝜓_𝑠=0), (b) 𝜓_𝑠=0.1 V, (c) 𝜓_𝑠=0.2 V. The ratio 𝜎_𝑛/𝜎_𝑝=𝜎⁰_𝑛/𝜎⁰_𝑝=100.