Journals
Publish with us
Publishing partnerships
About us
Blog
Advances in Condensed Matter Physics
Journal overview
For authors
For reviewers
For editors
Table of Contents
Special Issues
Advances in Condensed Matter Physics
/
2014
/
Article
/
Fig 7
/
Research Article
Modeling Surface Recombination at the p-Type
Interface via Dangling Bond Amphoteric Centers
Figure 7
Schematic of electron flows for recombination at positively correlated dangling bonds.