Analysis of Low Dimensional Nanoscaled Inversion-Mode InGaAs MOSFETs for Next-Generation Electrical and Photonic Applications

<div>Schematic device structure of In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFET.</div>

Advances in Condensed Matter Physics

Figure 1: Analysis of Low Dimensional Nanoscaled Inversion-Mode InGaAs MOSFETs for Next-Generation Electrical and Photonic Applications 