Formation, Energetics, and Electronic Properties of Graphene Monolayer and Bilayer Doped with Heteroatoms

Figure 8

Simulated STM images of (a) AA-, (b) AB1-, and (c) AB2-stacked bilayer graphenes doped with B atom (upper panel) and N atom (lower panel). The STM images for B-doped and N-doped cases are shown at the applied bias voltages of +0.5 eV and −0.5 eV, respectively. Reproduced with permission from [57], copyright 2015, Elsevier.

(a)

(b)

(c)