Recent Approaches for Broadening the Spectral Bandwidth in Resonant Cavity Optoelectronic Devices

Figure 6

Contour plots of the calculated transmittance change as a function of the number of pairs of DBR for a 7- SC structure with (a) 8 nm thick SQWs and (b) 8/8.5 nm ATQWs. The transmittance and transmittance change at the dashed line AB of the (c) 8 nm thick SQWs and the (d) 8/8.5 nm ATQWs. The insets of (a) and (b) schematically illustrate a SC structure with 8 nm thick SQWs and 8/8.5 nm ATQWs, respectively [61].

(a)

(b)

(c)

(d)