Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO<sub>2</sub> Based RRAM Devices

<div>The typical current-voltage characteristic of the as-deposited HfAlO<sub>2</sub> based RRAM devices.</div>

Advances in Condensed Matter Physics

Figure 2: Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO<sub>2</sub> Based RRAM Devices 