Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO<sub>2</sub> Based RRAM Devices

<div>The variation of resistance ratios of HRS to LRS in the HfAlO<sub>2</sub> RRAM devices with the ozone treatment.</div>

Advances in Condensed Matter Physics

Figure 4: Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO<sub>2</sub> Based RRAM Devices 