Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO₂ Based RRAM Devices

Figure 6

XPS O1s and Hf4f spectra of argon sputtered resistive switching films on different treatment conditions: (a) and (b) without the ozone treatment and (c) and (d) with the ozone treatment.

(a)

(b)

(c)

(d)