A Self-Consistent Model for Thermal Oxidation of Silicon at Low Oxide Thickness

Table 1

Experimental data from [7] in [6].

Table (series) in [6]	Si orientation	Temperature (in °C)	Oxygen partial pressure (in atm)	Native oxide (in nm)	Oxidation time range (in s)	Oxide thickness (in nm)
A1		870	1.0	0	18–31,476	0.68–61.8
A2		870	1.61	0	34–18,036	1.37–53.76
A3		780	1.0	0	271–47,838	1.37–36.25
A4		870	1.0	1.2	17–8,310	1.40–38.8
A5		930	1.0	0	30–16,992	3.32–107.3
A6		930	0.57	0	6–11,088	0.87–61.5
A7		870	1.56	0	25–22,569	1.03–96.55
A8		870	1.0	0	35–18,013	1.65–62.23
A9		870	0.56	0	28–24,198	1.43–53.00
A10		870	0.214	0	35–22,019	1.09–30.00
A11		832	1.0	0	58–12,672	1.39–30.05