A Self-Consistent Model for Thermal Oxidation of Silicon at Low Oxide Thickness

Table 2

Values of and in (36), calculated from the data in [6]. is the minimum silicon oxide thickness where (36) holds.

Blanc’s series	in nm/s		Range of validity (in nm)
A1	0.067	0.645	4.6
A2	0.071	0.659	4.5
A3	0.013	0.744	4.0
A4	0.075	0.691	10.5
A5	0.341	0.569	5.5
A6	0.147	0.649	13.2
A7	0.098	0.688	5.7
A8	0.078	0.682	6.6
A9	0.068	0.659	6.2
A10	0.037	0.669	6.4
A11	0.020	0.782	5.2